First Diamond FinFET without hydrogen termination will enable higher powered communication and guidance, more durability to heat and radiation than current silicon carbide or gallium nitride semiconductors.
The Defense Advanced Research Projects Agency (DARPA) has awarded HRL Laboratories, LLC, funding to research novel ways to synthesize semiconductors for sensing in the infrared spectrum, and methodologies to cost effectively integrate the infrared materials with silicon read-out integrated circuits (ROIC).
Researchers at HRL Laboratories, LLC, have achieved the first demonstration of gallium nitride (GaN) complementary metal-oxide-semiconductor (CMOS) field-effect-transistor (FET) technology, and in doing so have established that the semiconductor’s superior transistor performance can be harnessed in an integrated circuit. This breakthrough paves the way for GaN to become the technology of choice for power conversion circuits that are made in silicon today.