Displaying news tagged: FET
New Diamond Transistor Will Give Future Spacecraft More Powerful Electronics
First Diamond FinFET without hydrogen termination will enable higher powered communication and guidance, more durability to heat and radiation than current silicon carbide or gallium nitride semiconductors.
HRL Laboratories’ breakthrough may pave the way for Gallium Nitride to supplant Silicon in Integrated Circuits
Researchers at HRL Laboratories, LLC, have achieved the first demonstration of gallium nitride (GaN) complementary metal-oxide-semiconductor (CMOS) field-effect-transistor (FET) technology, and in doing so have established that the semiconductor’s superior transistor performance can be harnessed in an integrated circuit. This breakthrough paves the way for GaN to become the technology of choice for power conversion circuits that are made in silicon today.