Displaying news tagged: award

October 18, 2017

HRL Paper on Gallium Nitride Integrated Circuits Wins IEEE George E. Smith Award

The HRL team achieved the first gallium nitride (GaN) complementary metal-oxide-semiconductor field-effect-transistor technology, establishing superior GaN transistor performance harnessed in an integrated circuit. GaN could become the technology of choice for power conversion circuits currently made in silicon.

September 11, 2017

HRL High-Temperature Ceramics 3D-Printing Technology Selected as R&D 100 Finalist

HRL Laboratories, LLC, has been selected as a 2017 R&D 100 Finalist with the entry Additively Manufactured High-Temperature Polymer-Derived Ceramics.

April 1, 2015

HRL wins Best paper award (“Network-Based Group Account Classification”) at SBP