HRL Laboratories and Boeing Demonstrated High-Performance 40-nm GaN-on-SiC Technology for Space Applications

HRL Laboratories and Boeing demonstrated a state-of-the-art 40-nanometer (nm) gallium nitride (GaN) on silicon carbide (SiC) technology that delivers higher output power, efficiency, linearity, and low noise for space, terrestrial, and surface transmit/receive applications.

MALIBU, Calif. August 7, 2024— HRL Laboratories, LLC, and The Boeing Company recently demonstrated a state-of-the-art 40-nanometer (nm) gallium nitride (GaN) on silicon carbide (SiC) technology that delivers high performance and high bandwidth for satellite communication, radar, electronic warfare, and 5G/6G applications. Originally developed under the DARPA Dynamic Range-enhanced Electronics and Materials (DREaM) program with GaN maturation support from the Office of Undersecretary of Defense Research & Engineering (OUSD R&E), HRL is partnering with Boeing to qualify this unique patented and patent pending technology that delivers higher output power, efficiency, linearity, and low noise for space, terrestrial, and surface transmit/receive applications.

“HRL GaN demonstrates excellent noise, gain and outstanding reliability performance at mm-wave frequencies, providing an excellent on-shore and trusted foundry solution to our customers,” said Dr. Dan Denninghoff, Director at HRL Laboratories. “Advanced GaN capabilities provide our customers including Boeing and the U.S. Department of Defense access to high-performance GaN at an affordable price point.”

This high-performance monolithic microwave integrated circuit (MMIC) technology is co-optimized for power amplifiers (PA), low noise amplifiers (LNA) and switches for various applications with system level designs at frequency ranges from Ka through W bands (27 – 110 GHz) working closely with Boeing’s Space, Intelligence & Weapons Systems (SI&WS) and Research & Technology (BR&T) teams.

HRL’s GaN technology roadmap includes enhancements to facilitate advanced packaging and integration with high-density interconnects. Such integration would facilitate co-optimization of silicon-based MMIC design rules with GaN, further device scaling, improved quality factor passive networks, and low-loss interconnects.

“This cutting-edge commercially available GaN MMIC foundry technology allows Boeing to enhance system-level solutions enabling new design architectures, differentiated solutions and capabilities into our technology platforms,” said Dr. Shariq Siddiqui, Executive Director of Microelectronics at The Boeing Company.

HRL Laboratories, LLC, California (hrl.com) pioneers the next frontiers of physical and information science. Delivering transformative technologies in automotive,aerospace and defense, HRL advances the critical missions of its customers. As a private company owned jointly by Boeing and GM, HRL is a source of innovations that advance the state of the art in profound and far-reaching ways.

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